An Oxidation Behavior of the Amorphous Titanium Chromium Nitride Thin Films
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Abstract
Titanium chromium nitride (TiCrN) thin films were deposited on Si by reactive DC magnetron sputtering technique from a mosaic target. The oxidation behavior of TiCrN films was investigated by annealing in ambient air at 500-900oC for 1 h. The as-deposited film was characterized by X-ray diffraction techniques (XRD), energy-dispersive X-ray spectroscopy (EDS), and field-emission scanning electron microscopy (FE-SEM). The oxidation rate and oxidation activation energy were calculated from Wagner’s equation and Arrhenius’s equation, respectively. The results showed that the as-deposited thin film had an amorphous TiCrN structure. After annealing up to 900oC, the films still showed the amorphous structure. The EDS analysis found that the as-deposited films were composed of titanium, chromium, nitrogen, and oxygen in a different ratio. In addition, the oxygen content in the film increased with annealed temperature. The cross-sectional analysis from the FE-SEM technique showed a very thin oxide layer on surface of the as-deposited TiCrN film at 700oC and the oxide layer thickness was increased with the annealed temperature. Moreover, the as-deposited films were fully oxidized at 900oC. The results revealed that the as-deposited films can resist the oxidation up to 600oC, and the oxidation rate of films varied with annealing temperature. The oxidation activation energy was 134.90 kJ/mol.
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สงวนสิทธิ์ โดย สถาบันการอาชีวศึกษาภาคตะวันออกเฉียงเหนือ 1
306 หมู่ 5 ถนนมิตรภาพ หนองคาย-อุดรธานี ตำบลโพธิ์ชัย อำเภอเมืองหนองคาย จังหวัดหนองคาย 43000
โทร 0-4241-1445,0-4241-1447
ISSN : 3027-6861 (print) ISSN : 3027-687X (online)
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